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| IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Switch Mode RF MOSFET Low Capacitance Z-MOS MOSFET Process Lo Capacitance Z-MOSTMTM MOSFET Process Optimized for RF Operation Linear Operation Ideal for Class ABD, C,E Applications C, & & Broadcast & Communications Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 RDS(on) PDC = = = = 1200 V 8.0 A 2.1 880 W Maximum Ratings 1200 1200 20 30 8 40 8 TBD V V V V A A A mJ 5 V/ns >200 V/ns DRAIN PDC PDHS PDAMB RthJC RthJHS Tc = 25C, Derate 4.4W/C above 25C Tc = 25C 880 440 3.0 W W W GATE 0.17 C/W 0.34 C/W SG1 SG2 SD1 SD2 Features min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C typ. max. V 6.5 100 50 1 V nA A mA S +175 C C + 175 C C g 1200 3.5 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials VGS = 20 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 50 V, ID = 0.5ID25, pulse test 2.1 10.1 -55 175 -55 300 3.5 Advantages * Optimized for RF and high speed * Easy to mount--no insulators needed * High power density IXZ308N120 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF=Is, VGS=0 V, Pulse test, t 300s, duty cycle 2% VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. max. 1 pF pF pF pF ns ns ns ns 1960 59 9.2 33 4 5 4 6 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 8 48 1.5 TBD A V ns IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002 IXZ308N120 Z-MOS RF Power MOSFET 10000 1000 Ciss Capacitance in pF 100 Coss 10 Crss 1 0 200 400 600 800 1000 1200 Vds in Volts IXZ308N120 Capacitances verses Vds Doc #dsIXZ308N12 REV 06/04 (c) 2004 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: info@ixysrf.com Web: http://www.ixysrf.com |
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